ON SEMICONDUCTOR MJ11033G Bipolar (BJT) Single Transistor, PNP, -120 V, 300 W, -50 A, 400 hFE Construction Cameras & Accessories Battery Indicator on Transmitter

Battery Indicator on Transmitter

Operating Temperature Min -20�C Capacitor Terminals Axial Leaded Operating Temperature Max 85�C Lifetime @ Temperature - Voltage Rating 350V Product Range TVA Series Diameter 25

It is compatible with RED and third-party NATO-style accessories

Equally well-suited for the indoors and outdoors

This is a MOTORIZED IMPELLER product from EBM-PAPST with the model number R2E225-BD92-09Product details

ON SEMICONDUCTOR MJ11033G Bipolar (BJT) Single Transistor, PNP, -120 V, 300 W, -50 A, 400 hFE Construction Cameras & Accessories Battery Indicator on TransmitterThe MJ11033G is a PNP Complementary Silicon Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. This transistor features monolithic construction with built in base emitter shunt resistor. High DC current gain Diode protection to rated IC Applications Industrial, Power Management Product details Power Dissipation Pd 300W DC Collector Current 50A Collector Emitter Voltage V(br)ceo 120V