VISHAY IRFBE30PBF Power MOSFET, N Channel, 4.1 A, 800 V, 3 ohm, 10 V, 4 V Rode VIDEOMIC ME iPhone/iPad SIM tray ejection needle

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VISHAY IRFBE30PBF Power MOSFET, N Channel, 4.1 A, 800 V, 3 ohm, 10 V, 4 V Rode VIDEOMIC ME iPhone/iPad SIM tray ejection needleThe IRFBE30PBF is a 800V N channel Power MOSFET, third generation HEXFET power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on resistance. The package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50W. Dynamic dV dt rating Repetitive avalanche rated 150C Operating temperature Easy to parallel Simple drive requirement