VISHAY SIR870ADP-T1-GE3 MOSFET Transistor, N Channel, 60 A, 100 V, 0.0055 ohm, 10 V, 1.5 V LCD KVM Consoles 21mm Inductance 6

21mm Inductance 6

The sensor operates without external components and combines a fast power-up time with a low cut-off frequency

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(1) x composite video output - BNC

3 lb Box Dimensions (LxWxH) 22

VISHAY SIR870ADP-T1-GE3 MOSFET Transistor, N Channel, 60 A, 100 V, 0.0055 ohm, 10 V, 1.5 V LCD KVM Consoles 21mm Inductance 6The SIR870ADP T1 GE3 is a 100V N channel TrenchFET Power MOSFET. Suitable for use in primary side switching, telecom and DC DC inverters applications. The N channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A. Halogen free according to IEC 61249 2 21 definition 100% Rg Tested 100% UIS Tested Applications Power Management, Industrial, Computers & Computer Peripherals