STMICROELECTRONICS BUL1102EFP Bipolar (BJT) Single Transistor, NPN, 450 V, 30 W, 4 A, 20 hFE FSR IT-SACWP-12 78 lb (807 g) Packaging

78 lb (807 g) Packaging Info Package Weight 3

3-Digit combo lock Includes drawer brackets for easy installation Constructed of 5052 aluminum Black powder coated texture Made in the USA

Leather case

Accepts Nikon EN-EL5 Type Battery

Product Range WE-PD Series Inductance 47µH RMS Current (Irms) 850mA Saturation Current (Isat) 1A Inductor Construction Shielded DC Resistance Max 0

STMICROELECTRONICS BUL1102EFP Bipolar (BJT) Single Transistor, NPN, 450 V, 30 W, 4 A, 20 hFE FSR IT-SACWP-12 78 lb (807 g) PackagingThis is a Bipolar (BJT) Single Transistor, NPN, 450 V, 30 W, 4 A, 20 hFE product from STMICROELECTRONICS with the model number BUL1102EFPProduct details Transistor Polarity NPN Collector Emitter Voltage V(br)ceo 450V Transition Frequency ft Power Dissipation Pd 30W DC Collector Current 4A DC Current Gain hFE 20hFE Transistor Case Style TO 220FP No. of Pins 3Pins Operating Temperature Max 150C Product Range Automotive Qualification Standard MSL Other