MULTICOMP BC107A Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 150 MHz, 600 mW, 100 mA, 110 hFE Gra-Vue MMIO EMB-HDSDI_AES type 6061 T6 heat-treated aluminum

type 6061 T6 heat-treated aluminum Can be used in concrete

The cable extends from the host computer and provides another type A female connector up to 16

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The curved design of a battery grip offers a comfortable and secure way in which to hold your DSLR

2 side pockets (WxHxD): 5

MULTICOMP BC107A Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 150 MHz, 600 mW, 100 mA, 110 hFE Gra-Vue MMIO EMB-HDSDI_AES type 6061 T6 heat-treated aluminumThe BC107A is a 45V Silicon NPN Bipolar Planar Epitaxial Transistor intended for general purpose amplifier or switches. Low power Collector base voltage(Vcbo = 50V) Emitter base voltage(Vebo = 6V) Applications Industrial Product details Power Dissipation Pd 600mW DC Collector Current 100mA Collector Emitter Voltage V(br)ceo 45V Transition Frequency ft 150MHz Operating Temperature Max 200C Transistor Polarity NPN DC Current Gain hFE 110hFE No. of Pins