Monolayer Graphene on 300 nm SiO₂/Si Chose Your Size:1 inch x 1 inch · Gate oxide thickness: 90

· Gate oxide thickness: 90 nm

It is recommended to be added in matrixes (polymer

Nature 487

drain and gate enable to electrically isolate the board to replace the mGFET after a measurement in a quick and safe manner

· Oxygen: 54 – 55%

Monolayer Graphene on 300 nm SiO₂/Si Chose Your Size:1 inch x 1 inch · Gate oxide thickness: 90Monolayer Graphene on 300 nm SiO Si Fully Covered Processed in ISO 7 Cleanroom Our monolayer graphene on SiO Si (fully covered) is a bidimensional material produced by CVD and transferred to a circular substrate of SiO Si (300nm) by a semi dry transfer process. We consider it to be a benchmark product in the graphene market not only for its excellent quality, but also for its shape, size and number of applications. Graphene Film Growth method: CVD